18款禁用看黄入口app尿道_伊甸乐园大象2022直达入口_18款禁用看黄α在线入

中文

Product description

Product model

Design & development

  • CMS3D206C

    CMS3D206C:  Widely used in driving low-voltage DC brushless and DC brushed motors.

    Datasheet >

    The CMS3D206C circuit is a high-current, highly reliable half-bridge driver circuit designed using multi-chip packaging technology. The high-side power transistor is a P-channel VDMOS, and the low-side power transistor is an N-channel VDMOS. The internal logic control and gate driver circuits for the power transistors are designed using a BCD process, realizing the half-bridge driver functionality.

    The half-bridge driver circuit is controlled by two input signals that manage the conduction and switching of the high-side and low-side power transistors. The control method is PWM/EN control. The circuit incorporates a dynamic dead-time adjustment mechanism, which ensures that the low-side power transistor is only enabled after the high-side power transistor has turned off, and vice versa. The half-bridge driver circuit has a maximum operating voltage of 30V, is packaged in an SOP8 form, and supports a continuous current capability of 5A.

    This series of circuits supports zero standby power consumption. The circuit is activated by a high-level pulse on the EN signal, with a start-up delay of approximately 30μs. When the EN signal stays low for more than 122ms, the circuit enters a zero standby current mode.


    Features

    >   Zero standby power consumption

    >   Operating supply voltage range: 5V to 30V

    >   Operating temperature: -40°C to 105°C

    >   Built-in dynamic dead-time protection circuit, minimum dead-time of 250ns

    >   PWM/EN signal input method

    >   Current output capability: 5A

    >   5V input logic

    >   Built-in undervoltage protection function

  • Product model

    Part Number Package Temp Voltage ID@12V Input Logic Type of drive power transistors Straight-through prevention Output channel Built-in LDO Standby current (uA) 温度保护 VM Features RDS(on) 高侧/低侧MOS Overcurrent protection 动态死区
    CMS3D206C SOP8 -40~105℃ 5~30V 5A PWM/EN P/N驱动功率管 单通道 0uA 4.1/3.5V 合封MOSFET 29/19 250ns

  • Design & development

    Documentation
    Name Version Describe Download
    CMS3D206C User Manual V1.0.0

    It introduces the features, performance specifications, and packaging information of the CMS3D206C chip

    Download >

    More

Download Now

Fill out the form to download immediately.

*
*
*
*

Interested Products

*

This site uses cookies. By using our site you agree to our privacy policy. By closing this banner, scrolling this page, clicking a link or continuing to browse otherwise,you agree to the use of cookies.

化德县| 泸水县| 光山县| 泾川县| 通化市| 积石山| 察哈| 易门县| 霞浦县| 泾川县|